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 1N4151W
SMALL SIGNAL DIODES
FEATURES
SOD-123
.022 (0.55)
Silicon Epitaxial Planar Diode Fast switching diode. This diode is also available in other case styles including the SOD-123 case with the type designation 1N4151W and the Mini-MELF case with the type designation LL4151.
Cathode Mark
.152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55)
Top View
MECHANICAL DATA
max. .004 (0.1) max. .053 (1.35) max. .006 (0.15) .067 (1.70) .055 (1.40)
Case: SOD-123 Plastic Case Weight: approx. 0.01 g
min. .010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT
Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 C and f 50 Hz Surge Forward Current at t < 1 s and Tj = 25 C Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range
NOTES: (1) Valid provided that electrodes are kept at ambient temperature
VR VRM
50 75
V V
IO IFSM Ptot Tj TS
150 (1) 500 410 (1) 150 65 to +150
mA mA mW C C
1/4/99
1N4151W
ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified SYMBOL MIN. TYP. MAX. UNIT
Forward Voltage at IF = 50 mA Leakage Current at VR = 50 V at VR = 20 V, Tj = 150C Reverse Breakdown Voltage Tested with 5mA pulses Capacitance at VF = VR = 0 V Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 W Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V
NOTES: (1) Valid provided that electrodes are kept at ambient temperature (SOD-123)
VF IR IR V(BR)R Ctot
75

1.0 50 50 2
V nA mA V pF
trr trr RthJA hv
0.45

4 2 450 (1)
ns ns C/W
Rectification Efficiency Measurement Circuit
RATINGS AND CHARACTERISTICS CURVES 1N4151W
RATINGS AND CHARACTERISTICS CURVES 1N4151W


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